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v00.0404
MICROWAVE CORPORATION
HMC490LP5
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz
Features
Noise Figure: 2.5 dB +25 dBm P1dB Output Power Gain: 23 dB +34 dBm Output IP3 +5V Supply 50 Ohm Matched Input/Output 25 mm2 Leadless QFN SMT Package
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AMPLIFIERS - SMT
Typical Applications
The HMC490LP5 is ideal for use as either a LNA or driver amplifier for: * Point-to-Point Radios * Point-to-Multi-Point Radios * VSAT * Military EW, ECM & C3I
Functional Diagram
General Description
The HMC490LP5 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier which operates between 12 and 16 GHz. The HMC490LP5 provides 23 dB of gain, 2.5 dB noise figure and an output IP3 of +34 dBm from a +5.0 V supply voltage. This versatile amplifier combines excellent, stable +25 dBm P1dB output power with very low noise figure making it ideal for receive and transmit applications.The amplifier is packaged in a leadless 5 mm x 5 mm QFN surface mount package.
Electrical Specifications, TA = +25 C, Vdd = 5V, Idd = 200 mA*
Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.) 22 20 Min. Typ. 12 - 16 23 0.03 2.5 8 8 25 27 34 200 0.04 3.5 Max. Units GHz dB dB/ C dB dB dB dBm dBm dBm mA
* Adjust Vgg between -2.0 to 0V to achieve Idd = 200 mA typical. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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v00.0404
MICROWAVE CORPORATION
HMC490LP5
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz
GaAs MMIC SUB-HARMONICALLY Gain vs. Temperature PUMPED MIXER Broadband Gain & Return Loss
30 25 20 RESPONSE (dB) 15 10 5 0 -5 -10 -15 -20 8 10 12 14 16 18 20 FREQUENCY (GHz)
S21 S11 S22
17 - 25 GHz
30 28 26 24 20 18 16 14 12 10 8 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz)
+25 C +85 C -40 C
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AMPLIFIERS - SMT
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Input Return Loss vs. Temperature
0 -2 RETURN LOSS (dB) -4 -6 -8 -10 -12 -14 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz)
+25 C +85 C -40 C
Output Return Loss vs. Temperature
0
GAIN (dB) RETURN LOSS (dB)
22
-5
-10
-15
+25 C +85 C -40 C
-20 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz)
Noise Figure vs. Temperature
10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz)
+25 C +85 C -40 C
Output IP3 vs. Temperature
40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 10 11 12 13 14 15 16 FREQUENCY (GHz)
OIP3 (dBm)
+25 C +85 C -40 C
17
18
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0404
HMC490LP5
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz
8
AMPLIFIERS - SMT
P1dB vs. Temperature
32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 11 12 13 14 15 16 FREQUENCY (GHz)
Psat vs. Temperature
32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 11 12 13 14 15 16 FREQUENCY (GHz)
P1dB (dBm)
+25 C +85 C -40 C
Psat (dBm)
+25 C +85 C -40 C
17
18
17
18
Gain, Noise Figure & OIP3 vs. Supply Voltage @ 14 GHz, Idd= 200 mA
40 38 GAIN (dB), OIP3 (dBm) 36 34 32 30 28 26 24 22 20 3.5 3.75 4 4.25 4.5 4.75 5 5.25
Gain OIP3 Noise Figure
Power Compression @ 14 GHz
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 Pout (dBm), GAIN (dB), PAE (%)
5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 5.5 NOISE FIGURE (dB)
Pout (dBm) Gain (dB) PAE (%)
0
2
4
6
8 10
Vdd (Vdc)
INPUT POWER (dBm)
Gain, Noise Figure & IP3 vs. Supply Current @ 14 GHz, Vdd= 5V*
34 32 GAIN (dB), OIP3 (dBm) 30 28 26 24 22 20 18 16 14 100
Gain OIP3 Noise Figure
Reverse Isolation vs. Temperature
5 4.5 4 ISOLATION (dB) 3.5 3 2.5 2 1.5 1 0.5 0 200 -60 -70 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) -20 -30 -40 -50 NOISE FIGURE (dB) 0 -10
+25 C +85 C -40 C
125
150 Idd (mA)
175
* Idd is controlled by varying Vgg
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0404
HMC490LP5
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) Gate Bias Voltage (Vgg) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 29 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +5.5 Vdc -4.0 to 0 Vdc +10 dBm 175 C 2.65 W
Typical Supply Current vs. Vdd
Vdd (Vdc) +3.0 +3.5 +4.0 +4.5 +5.0 Idd (mA) 140 154 168 188 200 208
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AMPLIFIERS - SMT
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34 C/W -65 to +150 C -40 to +85 C
+5.5
Note: Amplifier will operate over full voltage ranges shown above.
Outline Drawing
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0404
HMC490LP5
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz
8
AMPLIFIERS - SMT
Pin Descriptions
Pin Number 1, 2, 6-12, 14-19, 23, 24, 26, 27, 29-31 Function Description No connection. These pins may be connected to RF ground. Performance will not be affected. Interface Schematic
N/C
3, 5, 20, 22
GND
Package bottom must also be connected to RF/DC ground.
4
RF IN
This pad is AC coupled and matched to 50 Ohms from 12 - 16 GHz.
13
Vgg
Gate control for amplifier. Adjust to achieve Idd of 200 mA. Please follow "MMIC Amplifier Biasing Procedure" Application Note. External bypass capacitors of 100 pF and 0.01 F are required.
21
RF OUT
This pad is AC coupled and matched to 50 Ohms from 12 - 16 GHz.
25, 28, 32
Vdd3, 2, 1
Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.01 F are required.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0404
HMC490LP5
GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz
Evaluation PCB
8
AMPLIFIERS - SMT
List of Materials for Evaluation PCB 108402*
Item J1 - J2 J3 - J8 C1 - C4 C5 - C8 U1 PCB** Description PC Mount SMA Connector DC Pin 1000pF Capacitor, 0402 Pkg. 4.7 F Capacitor, Tantalum HMC490LP5 108540 Evaluation PCB
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
** Circuit Board Material: Rogers 4350
* Reference this number when ordering complete evaluation PCB.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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